0.35µ CMOS Technology Selection Guide
Selection Guide:
| Process Name | Units | C35B3C0 | C35B3C1 | C35B4C3 |
| Process Type | mixed signal CMOS |
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| Drawn MOS Channel Length | µm | 0.35 |
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Operating Voltage | V | 2.5 - 3.6 | IO -5.5 | IO -5.5 |
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Number of Masks | 14 | 17 | 20 |
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| Number of Masking Layers |
| 19 | 21 | 24 |
| Number of Metal Layers |
| 3 | 3 | 4 |
| Number of Poly Layers |
| 2 | 2 | 2 |
| Substrate Type |
| p |
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| Diffusion Pitch | µm | 0.9 |
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| Metal1/2/3/4 Pitch | µm | 0.95 / 1.1 / 1.1 / 1.2 |
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| Metal1/2/3/4 connected Pitch | µm | 1.05 / 1.2 / 1.2 / 1.3 |
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| Poly1 Pitch | µm | 0.8 |
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| High Resistive Poly | kOhm/# | - | - | 1.2 |
| Poly1/Poly2 Precision Caps | fF/µm² | 0.9 | 0.9 | 0.9 |
| N/PMOS Channel Length | µm | 0.30/0.30 |
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| N/PMOS Saturation Current | µA/µm | 520 / 240 |
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| Flip-Flop Delay | ns | 0.8 |
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| NAND2 Delay *) | ns | 0.1 |
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| NAND2 Area | µm² | 54.6 |
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| NAND2 Power | µW/MHz | 2 |
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