0.8µm CMOS Technology Selection Guide

Process Name

Units

CXB

CXE

CXQ

Process Type

mixed signal CMOS

Drawn MOS Channel Length

µm

0.8

Operating Voltage

V

2.5 - 5.5

Number of Masks

11

12

13

Number of Masking Layers

12

13

14

Number of Metal Layers

2

2

2

Number of Poly Layers

1

2

2

Substrate Type

p-

Diffusion Pitch

µm

2.2

Metal1/2/3/4 Pitch

µm

2.1 / 2.3 / - / -

Metal1/2/3/4 connected Pitch

µm

2.55 / 2.7 / - / -

Poly1 Pitch

µm

1.7

High Resistive Poly

kOhm/#

-

-

1.2

Poly1/Poly2 Precision Caps

fF/µm²

-

0.9

0.9

N/PMOS Channel Length

µm

0.65 / 0.79

N/PMOS Saturation Current

µA/µm

400 / 195

Flip-Flop Delay

ns

1.4

NAND2 Delay

ns

0.16

NAND2 Area

µm²

516

NAND2 Power

µW/MHz

5