0.35µm Embedded Flash Technology

With its 0.35µm embedded Flash technology, austriamicrosystems provides robust embedded non-volatile memory processes for SoC solutions (System on Chip) in automotive, industrial and consumer applications like RFID, Smart Cards, Sensor Interfaces, Micro controller applications, Trimming applications and others.

Key Features embedded Flash

Based on the 0.35um CMOS process transferred from TSMC (Taiwan Semiconductor Manufacturing Company), the embedded Flash technology offers the following features:

  • Very high reliability (data retention >20 years @ 125 deg C, endurance 100k)
  • High temperature capability (suitable for automotive applications)
  • Low power consumption
  • Full customizable Flash or EEPROM blocks
  • EEPROM memory blocks accessible like a static RAM
  • Full modularity with 0.35um CMOS base process C35 enabling reuse of digital library and IP blocks

Key Specifications

  • C35B3E0: 0.35µm CMOS, 2 poly, 3 metal, PIP
  • C35B3E1: 0.35µm CMOS, 2 poly, 3 metal, PIP, 5V MOX
  • C35B3E3: 0.35µm CMOS, 2 poly, 3 metal, PIP, 5V MOX, High-Res Poly

Description

austriamicrosystems 0.35µm CMOS embedded EEPROM/Flash process is based on the proven 0.35µm mixed-signal CMOS process. With just a few additional mask levels, austriamicrosystems offers a very competitive, high-performance process technology to its customers.

The very reliable embedded EEPROM/Flash blocks offer low power operation and high data retention over an extended temperature range by using a proven PMOS-based NVM technology. The memory blocks are available as an add-on process module to the 0.35µm CMOS process and can also be configured as EEPROM blocks or Flash memories without any process changes.

Available Flash Blocks

Block Size

Organization

Supply Read

Write

Endurance

Data Retention

1Kx8 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

100k

>20 years @ 125 deg C

4Kx8 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

100k

>20 years @ 125 deg C

16Kx8 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

100k

>20 years @ 125 deg C

32Kx8 bit

Flash

2.7 – 3.6 V

2.7 – 3.6 V

100k

>20 years @ 125 deg C

4Kx16 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

100k

>20 years @ 125 deg C

32Kx16 bit

Flash

2.7 – 3.6 V

2.7 – 3.6 V

100k

>20 years @ 125 deg C

Reference design flow

  • Start design on C35 base process
  • Order custom specific flash block via sales department (IP block is subject to license fee and needs to be explicitly ordered)
  • Black box delivery: Receives an abstract and a Verilog simulation model of the memory
  • Mandatory 3 days design review with specialized austriamicrosystems + design engineers
  • Tape out: Fully verified design will be submitted to Full Service Foundry for manufacturing
  • Implementation of complete flash block layout & transfer to production
  • Wafer production at austriamicrosystems 8 inch fab
  • You will receive wafers with fully tested Flash/EEPROM blocks, wafer sort optionally available

Process Design Kits (HIT-Kit)

CADENCE Design Framework II

MENTOR IC Flow

Device Library (pcells)

Device Library (pcells)

Circuit Simulation Models

Circuit Simulation Models

CMOS Core and Peripheral Cell Libraries

CMOS Core and Peripheral Cell Libraries

Accurate Package Models

Accurate Package Models

RFDE and Dynamic Link to Agilent ADS

Highly accurate circuit simulation parameters for the simulators Eldo, EldoS, Hspice, Pspice, Saber, Smash, SpectreS, SpectreDirect, SmartSpice and ADSsim may be downloaded from our technical web server.
For detailed information please refer to http://asic.austriamicrosystems.com/hitkit/hk370

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