0,35 µm Technology Selection Guide
Selection Guide:
| Process Name | units | S35D4HP | S35D3H1 | S35D4H2 | S35D4H5 | S35D3M2 | S35D4M2 | S35D4M5 |
| Process Type | 12V HV-SiGe BiCMOS | HV-SiGe BiCMOS | SiGe-BiCMOS |
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|
Drawn MOS Channel Length, |
µm |
0.35 |
0.35 |
0.35 |
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| Operating Voltage CMOS |
V | 3.3/5/12 | 3.3/5 | 3.3 | 3.3/5 | 3.3 | 3.3 | 3.3/5 |
| Number of Metal Layers | 4 | 3 | 4 | 4 | 3 | 4 | 4 |
|
| Number of Poly Layers | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
|
| Substrate Type | p | p | p |
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| Diffusion Pitch | µm | 0.9 | 0.9 | 0.9 |
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| Metal1/2/3 Pitch | µm | 0.95/1.1/1.2 | 0.95/1.1/1.2 | 0.95/1.1/1.2 |
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| Poly1 Pitch | µm | 0.8 | 0.8 | 0.8 |
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| Thick Metal 4 pitch | µm | 4.5 | - | 4.5 | 4.5 | - | 4.5 | 4.5 |
| High Resistive Poly | kOhm/# | 1.2 | - | - | 1.2 | - | - | 1.2 |
| Poly1 / Poly2 Precision Caps | fF/µm² | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 | 0.9 |
| Metal 2 / Metal 3 Precision Caps | fF/µm² | 1.25 | - | 1.25 | 1.25 | 1.25 | 1.25 | 1.25 |
| N/PMOS Active Channel Length | µm | 0.30/0.30 | 0.30/0.30 | 0.30/0.30 |
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| N/PMOS Saturation Current | µA/µm | 540/240 | 540/240 | 540/240 |
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| Gain | - | 160 | 160 | 160 |
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| Early Voltage VAF | V | 100 | 100 | 100 |
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| HS-HBT: BVceo | V | - | - | - | - | 2.7 | 2.7 | 2.7 |
| ft / fmax | GHz | - | - | - | - | 60 / 70 | 60 / 70 | 60 / 70 |
| HV-HBT: BVceo | V | 5.5 | 5.5 | 5.5 | 5.5 | - | - | 5.5 |
| ft / fmax | GHz | 38/61 | 35 / 50 | 35 / 50 | 35 / 50 | - | - | 35 / 50 |