0,35 µm Technology Selection Guide

Process Name

units

S35D4HP

S35D3H1

S35D4H2

S35D4H5

S35D3M2

S35D4M2

S35D4M5

Process Type

12V HV-SiGe BiCMOS

HV-SiGe BiCMOS

SiGe-BiCMOS

Drawn MOS Channel Length,
Drawn Emitter Width

µm
µm

0.35
0.40

0.35
0.40

0.35
0.40

Operating Voltage CMOS

V
V

3.3/5/12

3.3/5

3.3

3.3/5

3.3

3.3

3.3/5

Number of Metal Layers

4

3

4

4

3

4

4

Number of Poly Layers

4

4

4

4

4

4

4

Substrate Type

p

p

p

Diffusion Pitch

µm

0.9

0.9

0.9

Metal1/2/3 Pitch

µm

0.95/1.1/1.2

0.95/1.1/1.2

0.95/1.1/1.2

Poly1 Pitch

µm

0.8

0.8

0.8

Thick Metal 4 pitch

µm

4.5

-

4.5

4.5

-

4.5

4.5

High Resistive Poly

kOhm/#

1.2

-

-

1.2

-

-

1.2

Poly1 / Poly2 Precision Caps

fF/µm²

0.9

0.9

0.9

0.9

0.9

0.9

0.9

Metal 2 / Metal 3 Precision Caps

fF/µm²

1.25

-

1.25

1.25

1.25

1.25

1.25

N/PMOS Active Channel Length

µm

0.30/0.30

0.30/0.30

0.30/0.30

N/PMOS Saturation Current

µA/µm

540/240

540/240

540/240

Gain

-

160

160

160

Early Voltage VAF

V

100

100

100

HS-HBT: BVceo

V

-

-

-

-

2.7

2.7

2.7

ft / fmax

GHz

-

-

-

-

60 / 70

60 / 70

60 / 70

HV-HBT: BVceo

V

5.5

5.5

5.5

5.5

-

-

5.5

ft / fmax

GHz

38/61

35 / 50

35 / 50

35 / 50

-

-

35 / 50