0.8µm Technology Selection Guide
Selection Guide:
| Process Name | units | BYE | BYQ |
| Process Type | BiCMOS |
||
|
Drawn MOS Channel Length |
µm |
0.8 |
|
| CMOS Operating Voltage | V | 5.5 |
|
| Number of Masks | 16 | 17 |
|
| Number of masking layers | 20 | 21 |
|
| Number of Metal Layers | 2 |
||
| Number of Poly Layers | 2 |
||
| Substrate Type | p |
||
| Diffusion Pitch | µm | 3.8 |
|
| Metal1/2/3 Pitch | µm | 2.4/2.8/- |
|
| Poly1 Pitch | µm | 1.8 |
|
| High Resistive Poly | kOhm/# | - | 1.2 |
| Poly1/Poly2 Precision Caps | fF/µm² | 1.8 | 1.8 |
| Metal 2 / Metal 3 Precision Caps | fF/µm² | - | - |
| N/PMOS Channel Length | µm | 0.66/0.75 |
|
| N/PMOS Saturation Current | µA/µm | 420/200 |
|
| HV HBT | > 6.0 |
||
| Bvceo | V | > 6.0 |
|
| Gain | 100 |
||
| Transit Frequency | GHz | 12 |
|
| Maximum Oscillation Freq. Fmax | GHz | 14 |
|