Bipolar and HBT Modeling
austriamicrosystems provides advanced bipolar device models optimized for high frequency circuit design and BiCMOS and SiGe process platforms.
Both the SGP model (Subcircuit Gummel-Poon) and the VBIC model (Vertical Bipolar Intercompany) are available as part of our simulator libraries and can be downloaded for a wide range of analog circuit simulators (e.g. Spectre, ELDO, HSPICE, ADS, SmartSpice, ..) from the download area of our technical web-server.
VBIC models are provided to describe relevant physical effects of SiGe-BiCMOS and BiCMOS processes. Some of the model advantages over the Standard Gummel-Poon model (SGP) are:
- Correct implementation of the Early effect
- Non-linear collector resistance modeling
- Inclusion of the parasitic substrate pnp transistor
- Quasi-distributed input circuitry
- Inclusion of collector weak avalanche
- Improved temperature mapping
In spite of the advanced features of VBIC, the SGP model is still provided and has been extended by an avalanche subcircuit. The scalability of all bipolar models over a wide range of geometries has been achieved by means of equation defined parameters.
