austriamicrosystems

0.35µm Embedded Flash Technology

With its 0.35µm embedded Flash technology, austriamicrosystems provides robust embedded non-volatile memory processes for SoC solutions (System on Chip) in automotive, industrial and consumer applications like RFID, Smart Cards, Sensor Interfaces, Micro controller applications, Trimming applications and others.

Key Features embedded Flash

Based on the 0.35µm CMOS process transferred from TSMC (Taiwan Semiconductor Manufacturing Company), the embedded Flash technology offers the following features:

  • Very high reliability (data retention >20 years @ 125°C, endurance 100k)
  • High temperature capability up to 170°C (suitable for automotive applications)
  • Low power consumption
  • Full customizable Flash or EEPROM blocks
  • EEPROM memory blocks accessible like a static RAM
  • Full modularity with 0.35µm CMOS base process C35 enabling reuse of digital library and IP blocks

Key Specifications

0.35µm CMOS embedded EEPROM processes

  • C35B3E0: 0.35µm CMOS, 2 poly, 3 metal, PIP
  • C35B3E3: 0.35µm CMOS, 2 poly, 3 metal, PIP, 5V MOX, High-Res Poly
  • C35B4E3: 0.35µm CMOS, 2 poly, 4 metal, PIP, 5V MOX, High-Res Poly
  • C35B4E6: 0.35µm CMOS, 2 poly, 4 metal, PIP, High-Res Poly, MIM caps

0.35µm High-Voltage CMOS embedded EEPROM processes

  • H35B3OC: 0.35µm High-Voltage CMOS, 2 poly, 3 metal, PIP, High-Res Poly, 20V HV-Gate
  • H35B3F2: 0.35µm High-Voltage CMOS, 2 poly, 3 metal, PIP, 5V MOX, 20V HV-Gate
  • H35B4OC: 0.35µm High-Voltage CMOS, 2 poly, 4 metal, PIP, High-Res Poly, 20V HV-Gate
  • H35B4H3: 0.35µm High-Voltage CMOS, 2 poly, 4 metal, PIP, High-Res Poly, 5V MOX, Thick top metal, 20V HV-Gate
  • H35B4H8: 0.35µm High-Voltage CMOS, 2 poly, 4 metal, PIP, High-Res Poly, 5V MOX, Thick top metal, MIM caps, 20V HV-Gate

Description

austriamicrosystems 0.35µm CMOS and High-Voltage CMOS embedded EEPROM/Flash processes are based on the proven 0.35µm mixed-signal CMOS process. With just a few additional mask levels, austriamicrosystems offers a very competitive, high-performance process technology to its customers.

The very reliable embedded EEPROM/Flash blocks offer low power operation and high data retention over an extended temperature range by using a proven PMOS-based NVM technology. The memory blocks are available as add-on process modules to the 0.35µm CMOS and High-Voltage CMOS processes and can also be configured as EEPROM blocks or Flash memories without any process changes.

Available EEPROM/Flash Blocks in 0.35µm CMOS process

Process

Block Size

Organization

Read Supply

Write Supply

Endurance

Data Retention

Size

C35 (mid-ox only)

1x8 bit

EEPROM

2.7 – 5.5V

2.7 – 5.5V

100k @ 125°C

>20 years @ 125°C

0.22mm²

C35

256x16 bit

EEPROM

1.8 – 3.6 V

1.8V - 3.6V

100k @ 125°C

>20 years @ 125°C

0.57mm²

C35

384x8 bit

EEPROM

2.5 – 3.6 V

2.5 – 3.6 V

100k @ 125°C

>20 years @ 125°C

0.73mm²

C35

1152x8 bit

EEPROM

1.6 – 3.6 V

1.6 – 3.6 V

100k @ 125°C

>20 years @ 125°C

0.79mm²

C35

4Kx16 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

100k @ 125°C

>20 years @ 125°C

1.23mm²

C35

32Kx8 bit

Flash

2.7 – 3.6 V

2.7 – 3.6 V

100k @ 125°C

>20 years @ 125°C

2.85mm²

C35

12K5x32 bit

EEPROM

1.8 – 3.6 V

1.8 – 3.6 V

100k @ 125°C

>20 years @ 125°C

4.44mm²

Available EEPROM/Flash Blocks in 0.35µm High-Voltage CMOS process

Process

Block Size

Organization

Read Supply

Write Supply

Endurance

Data Retention

Size

H35

64x8 bit

EEPROM

1.8 – 3,6V

1.8 – 3,6 V

80k @ 125°C

>20 years @ 125°C

0.36mm²

H35 (mid-ox only)

128x8 bit

EEPROM

2.3 – 5.5V

2.3 – 5.5 V

80k @ 125°C

>20 years @ 125°C

0.54mm²

H35

1Kx8 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

80k @ 125°C

>20 years @ 125°C

0.73mm²

H35, high-temp

1Kx8 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

40k @ 150°C

10 years @ 150°C

0.94mm²

H35, high-temp

2Kx8 bit

EEPROM

1.8 – 3.6V

1.8 – 3.6V

40k @ 150°C

10 years @ 150°C

1.20mm²

H35

4Kx16 bit

EEPROM

2.7 – 3.6 V

2.7 – 3.6 V

80k @ 125°C

>20 years @ 125°C

1.55mm²

Reference design flow

  • Start design on C35 base process
  • Order custom specific flash block via sales department (IP block is subject to license fee and needs to be explicitly ordered)
  • Black box delivery: Receives an abstract and a Verilog simulation model of the memory
  • Mandatory 3 days design review with specialized austriamicrosystems + design engineers
  • Tape out: Fully verified design will be submitted to Full Service Foundry for manufacturing
  • Implementation of complete flash block layout & transfer to production
  • Wafer production at austriamicrosystems 8 inch fab
  • You will receive wafers with fully tested Flash/EEPROM blocks, wafer sort optionally available

Process Design Kits (HIT-Kit)

CADENCE Design Framework II

MENTOR IC Flow

Device Library (pcells)

Device Library (pcells)

Circuit Simulation Models

Circuit Simulation Models

CMOS Core and Peripheral Cell Libraries

CMOS Core and Peripheral Cell Libraries

Accurate Package Models

Accurate Package Models

RFDE and Dynamic Link to Agilent ADS

Highly accurate circuit simulation parameters for the simulators Eldo, EldoS, Hspice, Pspice, Saber, Smash, SpectreS, SpectreDirect, SmartSpice and ADSsim may be downloaded from our technical web server.
For detailed information please refer to http://asic.austriamicrosystems.com/hitkit/